to - 220 a plastic - encapsulate diodes mbr 830, 35, 40, 45, 50, 60 schottky barrier rectifier features ? schottky barrier chip ? guard rin g die construction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maxi mum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr 830 mbr 835 mbr 840 mbr 845 mbr 850 mbr 860 unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current @ t c = 1 2 5 8 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 150 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mb ient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 to - 220 a 1 . cathode 2 . anode 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit mbr830 3 0 mbr 835 35 mbr 840 40 mbr 845 45 mbr 850 i r = 0. 1 m a 50 reverse voltage v (br) mbr 860 60 v mbr830 v r = 30 v mbr 835 v r = 35 v mbr 840 v r = 40 v mbr 845 v r = 45 v mbr 850 v r = 50 v reverse c urrent i r mbr 860 v r = 60 v 0.1 m a mbr830 - 45 0.7 v f (1) mbr 850,60 i f = 8 a 0.8 mbr830 - 45 0.84 forward voltage v f (2) mbr 850,60 i f = 16 a 0.95 v typical j unction capacitance c j mbr830 - 60 v r = 4 v,f=1mhz 250 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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